| PART |
Description |
Maker |
| UPD23C32300GZ-XXX-MJH UPD23C32300 UPD23C32300F9-BC |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
CAP 0.01UF 100V 5% X7R SMD-0805 TR-13 PLATED-NI/SN 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| MR27V1652E MR27V1652EMA MR27V1652ERA MR27V1652ETN |
1,048,576 - Word x 16-Bit or 2,097-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic componets
|
| MC-4532CC726EF-A80 MC-4532CC726EF-A10 MC-4532CC726 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
ELPIDA MEMORY INC
|
| M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MB82DP02183D-65LWT |
32M Bit (2 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
| MSM27C852CZ MSC27C852CZ MSM27C8B52CZ |
524,288-Word x 16-Bit or 1,048,576-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
From old datasheet system
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MSM27C452CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI electronic components
OKI electronic componets
OKI SEMICONDUCTOR CO., LTD.
|
| MC-4532CD647 MC-4532CD647EF-A75 MC-4532CD647PF-A75 |
32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
NEC Corp.
|
| MC-4532CC726XFA-A80 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
